La localización de Anderson de la luz en superredes fotónicas desordenadas unidimensionales es estudiada teóricamente. El sistema se considera compuesto de capas alternadas dispersivas y no dispersivas de diferentes espesores aleatorios. Las capas dispersivas de la heteroestructura están caracterizadas por permitividades eléctricas y permeabilidades magnéticas tipo Drude dependientes de la frecuencia. Los resultados numéricos para la longitud de la localización son obtenidos mediante un modelo analítico, solo válido en caso de desorden débil, y también a través de la definición general que involucra la transmisividad del sistema multicapas. Las dependencias anómalas λ4 y λ-4 de la longitud de localización en superredes fotónicas desordenadas son obtenidas, en ciertos casos, en los límites de longitudes de onda larga y corta, respectivamente.

The Anderson localization of light in one-dimensional disordered photonic superlattices is theoretically studied. The system is considered to be made of alternating dispersive and nondispersive layers of different randomthickness. Dispersive slabs of the heterostructure are characterized by Drude-like frequency-dependent electric permittivities and magnetic permeabilities. Numerical results for the localization length are obtained via an analytical model, only valid in the case of weak disorder, and also through its general definition involving the transmissivity of the multilayered system. Anomalous λ4- and λ-4-dependencies of the localization length in positive-negative disordered photonic superlattices are obtained, in certain cases, in the long and short wavelength limits, respectively.

The dependence of the electron Landé g-factor on carrier confinement in quantum wells recently gained both experimental and theoretical interest. The g factor of electrons in GaAs-(Ga,Al)As quantum wells is of special interest, as it changes its sign at a certain value of the well width. In the present work, the effects of an in-plane magnetic field on the cyclotron effective mass and on the Landé g<FONT FACE=Symbol>^</FONT>-factor in single GaAs-(Ga,Al)As quantum wells are studied. Theoretical calculations are performed in the framework of the effective-mass and non-parabolic-band approximations. The Ogg-McCombe Hamiltonian is used for the conduction-band electrons in the semiconductor heterostructure, and the Landé g<FONT FACE=Symbol>^</FONT>-factor theoretically evaluated is found in good agrement with available experimental measurements.